2N5937 GP BJT
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- 5 GENERAL SEMICONDUCTOR
- 1150 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 160V 30A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Voltage | 160 | V |
| Maximum DC Collector Current | 30 | A |
| Maximum Power Dissipation | 100000 | mW |
| Maximum Transition Frequency | 30(Typ) | MHz |
| Type | NPN |