2N5952 JFET
Datasheet: View
Stock
- 965 NATIONAL SEMICONDUCTOR
- 901 NEW JERSEY SEMICONDUCTOR
- 7 RF POWER
- 1 TEXAS INSTRUMENT
- 5 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Channel Type | N | |
| Configuration | Single | |
| Material | Si | |
| Maximum Drain Gate Voltage | 30 | V |
| Maximum Gate Source Voltage | 30 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 360 | mW |
| Minimum Operating Temperature | -65 | °C |