2N5956 GP BJT
Datasheet: View
Stock
- 1 GENERAL ELECTRIC
- 433 HARRIS
- 15 INTERNATIONAL DEVICES INC
- 4538 NEW JERSEY SEMICONDUCTOR
- 359 RCA
- 9 SILICON TRANSISTOR CORP
- 1 SOLID SATE
- 25 SOLID STATE TRANSISTOR
- 1 SOLITRON
- 4 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.3A@3A|2@1.2A@6A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 5(Min) | MHz |
| Type | PNP |