2N5966 GP BJT

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  • 97 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 40A 3-Pin TO-63

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.2@1.5mA@15mA V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 40 A
Maximum Power Dissipation 220000 mW
Type NPN