2N6030 GP BJT
Datasheet: View
Stock
- 3859 NEW JERSEY SEMICONDUCTOR
- 4 SOLID STATE INC
- 23 SOLID STATE TRANSISTOR
- 2 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 1@1A@10A|2@4A@16A | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 16 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 200000 | mW |
| Maximum Transition Frequency | 1(Min) | MHz |
| Type | PNP |