2N6032 GP BJT
Datasheet: View
Stock
- 6 ADVANCED SEMI
- 3 GENERAL SEMICONDUCTOR
- 1 HARRIS
- 200 NEW JERSEY SEMICONDUCTOR
- 87 RCA
- 2 SGS
- 3 ST MICRO
Trans GP BJT NPN 90V 50A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 1.3@5A@50A | V |
| Maximum Collector Emitter Voltage | 90 | V |
| Maximum DC Collector Current | 50 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 140000 | mW |
| Type | NPN |