2N6033 GP BJT
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Stock
- 1 HARRIS
- 102 NEW JERSEY SEMICONDUCTOR
- 38 RCA
- 4 SGS
Trans GP BJT NPN 120V 40A 3-Pin(2+Tab) TO-3
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 150 | V |
| Maximum Collector Emitter Saturation Voltage | 1@4A@40A | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 40 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 140000 | mW |
| Type | NPN |