2N6038 Darlington BJT
Datasheet: View
Stock
- 3 MOTOROLA
- 15 NATIONAL SEMICONDUCTOR
- 3858 NEW JERSEY SEMICONDUCTOR
- 53 RF POWER
- 11 SGS
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 4@40mA@4A | V |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum Continuous DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 500@0.5A@3V|750@2A@3V|100@4A@3V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 25(Min) | MHz |