2N6040 Darlington BJT
Datasheet: View
Stock
- 218 MOTOROLA
- 5 NATIONAL SEMICONDUCTOR
- 6863 NEW JERSEY SEMICONDUCTOR
- 28 SOLID SATE
- 12 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 4.5@80mA@8A | V |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum Continuous DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 1000@4A@4V|100@8A@4V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | PNP | |
| Typical Current Gain Bandwidth | 4(Min) | MHz |