2N6042 Darlington BJT
Datasheet: View
Stock
- 94 MOTOROLA
- 198 NATIONAL SEMICONDUCTOR
- 3919 NEW JERSEY SEMICONDUCTOR
- 10 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 4.5@80mA@8A | V |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum Continuous DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 1000@3A@4V|100@8A@4V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | PNP | |
| Typical Current Gain Bandwidth | 4(Min) | MHz |