2N6046 GP BJT

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  • 5 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 20A 3-Pin TO-63

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 2@1.33mA@20mA V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 20 A
Maximum Power Dissipation 114000 mW
Type NPN