2N6057 Darlington BJT
Datasheet: View
Stock
- 228 FAIRCHILD
- 7 HARRIS
- 21 MOTOROLA
- 4219 NEW JERSEY SEMICONDUCTOR
- 21 RCA
- 30 SEMTECH CORPIS CHRISTI
- 3 SOLID STATE TRANSISTOR
- 1 SOLITRON
- 30 ST MICRO
- 18 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 4@120mA@12A | V |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum Continuous DC Collector Current | 12 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 750@6A@3V|100@12A@3V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 4(Min) | MHz |