2N6058 Darlington BJT
Datasheet: View
Stock
- 2 DELCO
- 10 GENERAL TRANSISTOR
- 10 HARRIS
- 131 MOTOROLA
- 3650 NEW JERSEY SEMICONDUCTOR
- 21 RCA
- 5 SIGNETICS
- 7 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 4@120mA@12A | V |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum Continuous DC Collector Current | 12 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 175 | °C |
| Minimum DC Current Gain | 1000@1A@3V|1000@6A@3V|150@12A@3V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |