2N6059 Darlington BJT
Datasheet: View
Stock
- 6 GENERAL ELECTRIC
- 17 HARRIS
- 3 MOTOROLA
- 171 NEW JERSEY SEMICONDUCTOR
- 38 RCA
- 5 SGS
- 33 SILICON TRANSISTOR CORP
- 15 SOLID STATE TRANSISTOR
- 17 ST MICRO
- 39 TEXAS INSTRUMENT
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 4@120mA@12A | V |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum Continuous DC Collector Current | 12 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 175 | °C |
| Minimum DC Current Gain | 1000@1A@3V|1000@6A@3V|150@12A@3V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |