2N6062 GP BJT

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  • 1 MOTOROLA
  • 9 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 50A 3-Pin TO-63

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1@2mA@20mA V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 50 A
Maximum Emitter Base Voltage 10 V
Maximum Power Dissipation 150000 mW
Type NPN