2N6076 GP BJT
Datasheet: View
Stock
- 19 FAIRCHILD
- 155 GENERAL ELECTRIC
- 1700 NATIONAL SEMICONDUCTOR
- 615 NEW JERSEY SEMICONDUCTOR
- 2925 SAMSUNG
- 1 SIGNETICS
- 1 WALBERN
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 25 | V |
| Maximum Collector Emitter Saturation Voltage | 0.25@1mA@10mA | V |
| Maximum Collector Emitter Voltage | 25 | V |
| Maximum DC Collector Current | 0.1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 625 | mW |
| Maximum Transition Frequency | 200(Typ) | MHz |
| Type | PNP |