2N6081 RF BJT
Datasheet: View
Stock
- 118 MICROSEMI CONDUCTOR
- 3 MOTOROLA
- 5 NEW JERSEY SEMICONDUCTOR
- 2 TIC SEMI
- 224 TOMSON
| Features | Values | Unit |
|---|---|---|
| Configuration | Single Dual Emitter | |
| Maximum Collector Base Voltage | 36 | V |
| Maximum Collector Emitter Voltage | 18 | V |
| Maximum DC Collector Current | 2.5 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Transition Frequency | 200(Min) | MHz |
| Minimum DC Current Gain | 5@5V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Output Power | 15(Min) | W |
| Type | NPN |