2N6083 RF BJT

Features	Values	Unit
Configuration	Single Dual Emitter
Maximum Collector Base Voltage	36	V
Maximum Collector Emitter Voltage	18	V
Maximum DC Collector Current	4	A
Maximum Emitter Base Voltage	4	V
Maximum Operating Temperature	200	°C
Maximum Transition Frequency	200(Min)	MHz
Minimum DC Current Gain	5@5V
Minimum Operating Temperature	-65	°C
Number of Elements per Chip	1
Output Power	30(Min)	W
Type	NPN