2N6099A GP BJT
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Stock
- 8 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 70 | V |
| Maximum Collector Emitter Saturation Voltage | 2.5@10A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Power Dissipation | 75000 | mW |
| Maximum Transition Frequency | 5(Min) | MHz |
| Type | NPN |