2N6107 GP BJT
Datasheet: View
Stock
- 20 ADVANCED SEMI
- 15 FAIRCHILD
- 9 HARRIS
- 31094 MOTOROLA
- 25 NATIONAL SEMICONDUCTOR
- 2327 NEW JERSEY SEMICONDUCTOR
- 83 RCA
- 940 ST MICRO
- 4 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 3.5@3A@7A | V |
| Maximum Collector Emitter Voltage | 70 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 10(Min) | MHz |
| Type | PNP |