2N6109 GP BJT
Datasheet: View
Stock
- 8 ADVANCED SEMI
- 9 FAIRCHILD
- 9 GENERAL ELECTRIC
- 7 HARRIS
- 1683 MOTOROLA
- 64 NATIONAL SEMICONDUCTOR
- 5528 NEW JERSEY SEMICONDUCTOR
- 16 RCA
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 3.5@3A@7A | V |
| Maximum Collector Emitter Voltage | 50 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 10(Min) | MHz |
| Type | PNP |