2N6110 GP BJT

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  • 384 NATIONAL SEMICONDUCTOR
  • 4410 NEW JERSEY SEMICONDUCTOR
  • 6 RCA
  • 15 RF POWER

Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-213AA

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 1@0.3A@3A|3.5@3A@7A V
Maximum Collector Emitter Voltage 30 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1800 mW
Maximum Transition Frequency 10(Min) MHz
Type PNP