2N6134 GP BJT
Datasheet: View
Stock
- 47 FAIRCHILD
- 57 MOTOROLA
- 517 NATIONAL SEMICONDUCTOR
- 30939 NEW JERSEY SEMICONDUCTOR
- 50 RCA
- 40 RF POWER
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.7@200mA@2A|1.2@500mA@5A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1000 | mW |
| Supplier Temperature Grade | Military | |
| Type | PNP |