2N6211 GP BJT
Datasheet: View
Stock
- 34 CENTAL SEMI
- 39 KERTRON
- 59 MOTOROLA
- 953 NEW JERSEY SEMICONDUCTOR
- 2 RCA
- 2 SILICON TRANSISTOR CORP
- 8 SOLID SATE
- 12 SOLID STATE TRANSISTOR
- 168 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 275 | V |
| Maximum Collector Emitter Saturation Voltage | 1.4@125mA@1A | V |
| Maximum Collector Emitter Voltage | 225 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 35000 | mW |
| Maximum Transition Frequency | 20(Min) | MHz |
| Type | PNP |