2N6213 GP BJT

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  • 1 HARRIS
  • 71 MOTOROLA
  • 2836 NEW JERSEY SEMICONDUCTOR
  • 6 SOLID SATE
  • 2 SOLID STATE TRANSISTOR
  • 2 SOLITRON
  • 1 WORLD WIDE

Trans GP BJT PNP 350V 5A 3-Pin(2+Tab) TO-66 Sleeve

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 400 V
Maximum Collector Emitter Saturation Voltage 2@125mA@1A V
Maximum Collector Emitter Voltage 350 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 35000 mW
Maximum Transition Frequency 20(Min) MHz
Type PNP