2N6215 GP BJT

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  • 13 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 2A 3-Pin TO-63

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 0.8@0.125mA@2.5mA V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 2 A
Maximum Power Dissipation 35000 mW
Type NPN