2N6227 GP BJT
Datasheet: View
Stock
- 559 HARRIS
- 15 MOTOROLA
- 2747 NEW JERSEY SEMICONDUCTOR
- 25 RF POWER
- 6 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.3A@3A|2@1.2A@6A | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 150000 | mW |
| Maximum Transition Frequency | 300 | MHz |
| Type | PNP |