2N6230 GP BJT
Datasheet: View
Stock
- 107 MOTOROLA
- 3053 NEW JERSEY SEMICONDUCTOR
- 11 RF POWER
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.75A@7.5A|2@2A@10A | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 150000 | mW |
| Maximum Transition Frequency | 1(Min) | MHz |
| Type | PNP |