2N6232 GP BJT
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Stock
- 42 NEW JERSEY SEMICONDUCTOR
- 1 SOLID STATE TRANSISTOR
Trans GP BJT NPN 100V 10A 3-Pin TO-5
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 140 | V |
| Maximum Collector Emitter Saturation Voltage | 0.7@0.5A@5A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 1250 | mW |
| Type | NPN |