2N6249 GP BJT

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Stock

  • 3 ADVANCED SEMI
  • 9 FAIRCHILD
  • 4 HARRIS
  • 18 MOTOROLA
  • 3821 NEW JERSEY SEMICONDUCTOR
  • 6 SILICON TRANSISTOR CORP

Trans GP BJT NPN 200V 10A 3-Pin(2+Tab) TO-3 Sleeve

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 300 V
Maximum Collector Emitter Saturation Voltage 1.5@10A V
Maximum Collector Emitter Voltage 200 V
Maximum DC Collector Current 10 A
Maximum Power Dissipation 175000 mW
Maximum Transition Frequency 2.5(Min) MHz
Type NPN