2N6260 GP BJT
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- 8317 NEW JERSEY SEMICONDUCTOR
- 13 POWER PHYSICS CORP
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@1.5A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 4 | A |
| Maximum Power Dissipation | 29000 | mW |
| Maximum Transition Frequency | 0.8(Min) | MHz |
| Type | NPN |