2N627 GP BJT
Datasheet: View
Stock
- 103 LTE
- 1014 NEW JERSEY SEMICONDUCTOR
- 10 RF POWER
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 3.5@3A@7A | V |
| Maximum Collector Emitter Voltage | 30 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 4(Min) | MHz |
| Type | NPN |