2N6274 GP BJT
Datasheet: View
Stock
- 8 GENERAL SEMI
- 10 MOTOROLA
- 556 NEW JERSEY SEMICONDUCTOR
- 3 SILICON TRANSISTOR CORP
- 452 SOLITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Saturation Voltage | 1@2A@20A|3@10A@50A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 50 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 250000 | mW |
| Type | NPN |