2N6276 GP BJT

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  • 26 GENERAL SEMICONDUCTOR
  • 5 INTERNATIONAL RECTIFIER
  • 19 MOTOROLA
  • 1461 NEW JERSEY SEMICONDUCTOR
  • 5 RF POWER

Trans GP BJT NPN 120V 50A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 3@10mA@20mA V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 50 A
Maximum Power Dissipation 250000 mW
Type NPN