2N6278 GP BJT
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- 1 GENERAL SEMICONDUCTOR
- 1658 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 100V 50A 3-Pin TO-63
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage | 1.2@2mA@20mA | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 50 | A |
| Maximum Power Dissipation | 250000 | mW |
| Type | NPN |