2N6279 GP BJT

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  • 124 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 120V 50A 3-Pin TO-63

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.2@2mA@20mA V
Maximum Collector Emitter Voltage 120 V
Maximum DC Collector Current 50 A
Maximum Power Dissipation 250000 mW
Type NPN