2N6281 GP BJT

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  • 1 HARRIS
  • 10 INMOS
  • 1 MOTOROLA
  • 2592 NEW JERSEY SEMICONDUCTOR
  • 5 SILICON TRANSISTOR CORP

Trans GP BJT NPN 150V 50A 3-Pin TO-63

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.2@2mA@20mA V
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 50 A
Maximum Power Dissipation 250000 mW
Type NPN