2N6287 Darlington BJT
Datasheet: View
Stock
- 15 FAIRCHILD
- 4 HARRIS
- 16 MOTOROLA
- 310 NEW JERSEY SEMICONDUCTOR
- 64 ON SEMI
- 5 RCA
- 3 SGS
- 7 SILICON TRANSISTOR CORP
- 4124 ST MICRO
- 8 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 4@200mA@20A | V |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum Continuous DC Collector Current | 20 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 175 | °C |
| Minimum DC Current Gain | 1500@1A@3V|1250@10A@3V|300@20A@3V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | PNP |