2N6293 GP BJT
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- 1 HARRIS
- 4164 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 70V 7A 3-Pin(3+Tab) TO-213AA
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.2A@2A | 3.5@3A@7A |
| Maximum Collector Emitter Voltage | 70 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1800 | mW |
| Maximum Transition Frequency | 10(Min) | MHz |
| Type | NPN |