2N6295 Darlington BJT
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Stock
- 3738 NEW JERSEY SEMICONDUCTOR
- 9 SILICON TRANSISTOR CORP
- 38 UNITED PAGE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 4@40mA@4A | V |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum Continuous DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 750@2A@3V|100@4A@3V|300@1.5A@3V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 4(Min) | MHz |