2N6298 Darlington BJT
Datasheet: View
Stock
- 20 MOTOROLA
- 4035 NEW JERSEY SEMICONDUCTOR
- 2 POWER PHYSICS CORP
- 16 RCA
- 5 SILICON TRANSISTOR CORP
- 2 SOLID STATE TRANSISTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 4@80mA@8A | V |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum Continuous DC Collector Current | 8 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 175 | °C |
| Minimum DC Current Gain | 500@1A@3V|750@4A@3V|100@8A@3V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | PNP |