2N6306 GP BJT
Datasheet: View
Stock
- 1 FAIRCHILD
- 32 MOTOROLA
- 4566 NEW JERSEY SEMICONDUCTOR
- 2 RCA
- 1 SGS
- 1 SIGNETICS
- 15 SOLID SATE
- 17 SOLID STATE TRANSISTOR
- 2 TEXAS INSTRUMENT
- 1 TOMSON
- 120 UNITRODE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 500 | V |
| Maximum Collector Emitter Saturation Voltage | 5@2A@8A|0.8@0.6A@3A | V |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum DC Collector Current | 8 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 125000 | mW |
| Type | NPN |