2N6308 GP BJT
Datasheet: View
Stock
- 15 FAIRCHILD
- 2 HARRIS
- 4 INTERNATIONAL RECTIFIER
- 177 MOTOROLA
- 1385 NEW JERSEY SEMICONDUCTOR
- 1 SILICON TRANSISTOR CORP
- 5 SOLID STATE SYSTEMS
- 400 SOLID STATE TRANSISTOR
- 21 SOLITRON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 700 | V |
| Maximum Collector Emitter Saturation Voltage | 5@2.67A@8A|1.5@0.6A@3A | V |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 8 | A |
| Maximum Emitter Base Voltage | 8 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 125000 | mW |
| Type | NPN |