2N6312 GP BJT
Datasheet: View
Stock
- 1 HARRIS
- 10 MOTOROLA
- 44310 NEW JERSEY SEMICONDUCTOR
- 86 RCA
- 19 RF POWER
- 72 SOLID STATE TRANSISTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.7@0.15A@1.5A|2@0.3A@3A|4@1.25A@5A | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 75000 | mW |
| Maximum Transition Frequency | 4(Min) | MHz |
| Type | PNP |