2N6313 GP BJT
Datasheet: View
Stock
- 8 GENERAL ELECTRIC
- 25 HARRIS
- 6 MOTOROLA
- 3916 NEW JERSEY SEMICONDUCTOR
- 10 RF POWER
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Material | Si | |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Saturation Voltage | 0.7@0.15A@1.5A|2@0.3A@3A|4@1.25A@5A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 75000 | mW |
| Maximum Transition Frequency | 4(Min) | MHz |
| Type | PNP |