2N6316 GP BJT
Datasheet: View
Stock
- 20 MOTOROLA
- 10639 NEW JERSEY SEMICONDUCTOR
- 15 RF POWER
- 30 SOLITRON
- 35 UBN TECH
- 4 WESTINGHOUSE
- 1 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.4A@4A|2@1.75A@7A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 7 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 90000 | mW |
| Maximum Transition Frequency | 4(Min) | MHz |
| Type | NPN |