2N6316A GP BJT

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  • 8 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 7A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 1@0.4A@4A|2@1.75A@7A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 90000 mW
Maximum Transition Frequency 4(Min) MHz
Type NPN