2N6317 GP BJT

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  • 86 MICROSEMI CONDUCTOR
  • 6 MOTOROLA
  • 4148 NEW JERSEY SEMICONDUCTOR
  • 2 SOLID STATE SYSTEMS
  • 6 SOLITRON
  • 3 TRANSITRON
  • 12 WORLD WIDE

Trans GP BJT PNP 60V

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60 V
Maximum Collector Emitter Saturation Voltage 1@0.4A@4A|2@1.75A@7A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 90000 mW
Maximum Transition Frequency 4(Min) MHz
Type PNP
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 60
Maximum Collector Emitter Saturation Voltage 1@0.4A@4A|2@1.75A@7A
Maximum Collector Emitter Voltage 60
Maximum DC Collector Current 7
Maximum Emitter Base Voltage 5
Maximum Operating Temperature 200
Maximum Power Dissipation 90000
Maximum Transition Frequency 4(Min)
Type PNP