2N6318 GP BJT

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  • 16 MOTOROLA
  • 4362 NEW JERSEY SEMICONDUCTOR
  • 5 SILICON TRANSISTOR CORP

Trans GP BJT PNP 80V 7A 3-Pin(2+Tab) TO-66

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 1@0.4A@4A|2@1.75A@7A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 7 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 90000 mW
Maximum Transition Frequency 4(Min) MHz
Type PNP