2N6323 GP BJT

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  • 1 MOTOROLA
  • 103 NEW JERSEY SEMICONDUCTOR
  • 12 SILICON TRANSISTOR CORP
  • 6 WORLD WIDE

Trans GP BJT NPN 300V 30A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Emitter Saturation Voltage 1.5@2mA@5mA V
Maximum Collector Emitter Voltage 300 V
Maximum DC Collector Current 30 A
Maximum Power Dissipation 350000 mW
Type NPN